Product Overview: PBN insulation rings/sheets are widely used as insulating components in high vacuum and high-temperature environments due to their excellent high-temperature electrical insulation properties and ultra-high purity.

VGF crucibles are a type of crucible used in the Vertical Gradient Freezing (VGF) method. Currently, VGF technology is a popular technique for single crystal growth and is an excellent choice for growing GaAs and InP single crystals in the optoelectronics and semiconductor industries.

Product Overview: The Liquid Encapsulated Czochralski (LEC) method is capable of growing high-purity, undoped semi-insulating single crystals or polycrystals suitable for direct ion implantation.

Product Overview: Molecular Beam Epitaxy (MBE) is one of the methods used for producing Gallium Arsenide (GaAs) epitaxial wafers. This method can produce epitaxial materials with various structures, including multi-layer, homogeneous, heterogeneous, superlattices, and quantum wells. The crystal purity is high, and the chemical stability is good.

Product Overview: Conventional insulating materials typically have drawbacks such as poor high-temperature resistance, low purity, gas release at high temperatures, poor toughness, loss of insulation properties at high temperatures, and susceptibility to corrosion. PBN (Pyrolytic Boron Nitride) insulating boards address these issues effectively.

Product Overview: The horizontal directional solidification method is used to synthesize polycrystals. The directional solidification furnace consists of three temperature zones. Taking gallium arsenide (GaAs) polycrystals as an example, arsenic sublimates in the low-temperature zone (around 630°C), passes through the intermediate-temperature zone, and gradually reacts with gallium in the high-temperature zone (1250–1255°C) to form GaAs polycrystals. PBN boats are used as reaction vessels in the high-temperature zone.